Details

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BUY IXGH15N120B https://www.utsource.net/itm/p/12610113.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CES	-	-	1200	V
Collector Current	I C	-	-	15	A	T C = 25掳C
Collector Current (Pulsed)	I CM	-	-	30	A	t p = 10 渭s, I FS = 15 A
Gate-Emitter Voltage	V GE	-15	-	15	V
Total Power Dissipation	P T	-	-	250	W	T C = 25掳C
Junction Temperature	T J	-55	-	175	掳C
Storage Temperature	T STG	-55	-	150	掳C
Thermal Resistance (Junction to Case)	R 胃JC	-	0.4	-	K/W

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the device to high temperatures or mechanical stress.
   • Use proper ESD protection when handling the device.

2. Mounting:

   • Ensure good thermal contact between the device and the heatsink.
   • Use a thermal interface material (TIM) to enhance heat dissipation.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure the junction temperature remains within the specified range to avoid thermal damage.

4. Gate Drive:

   • Apply a gate-emitter voltage (V GE) within the specified range to ensure reliable operation.
   • Use a gate resistor to limit current and reduce ringing.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow recommended storage conditions to maintain device integrity.

6. Testing:

   • Perform initial testing under controlled conditions to verify performance.
   • Use appropriate test equipment and methods to avoid damaging the device.

7. Application Notes:

   • Refer to the datasheet for detailed application notes and circuit diagrams.
   • Consult with the manufacturer for specific application support and recommendations.

(For reference only)