Details

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BUY K4G41325FC-HC04 https://www.utsource.net/itm/p/12610120.html

Parameter	Description	Value
Device Type	Type of Memory Device	8Gb DDR4 SDRAM
Package	Package Type	FBGA (Fine Pitch Ball Grid Array)
Form Factor	Physical Size	78-ball, 10x14mm
Density	Memory Density	8 Gb (1 Gb = 1,073,741,824 bits)
Organization	Internal Organization	x8/x16/x32
Supply Voltage (VDD)	Operating Supply Voltage	1.2V 卤 0.1V
Supply Voltage (VDDQ)	I/O Supply Voltage	1.2V 卤 0.1V
Operating Temperature	Temperature Range	Commercial: 0掳C to 85掳C Industrial: -40掳C to 85掳C
Data Rate	Maximum Data Rate	2133 MT/s (Mega Transfers per second)
CAS Latency	Column Address Strobe Latency	15, 16, 17, 18, 19, 20, 21, 22, 24
tRCD	Row to Column Delay	15, 16, 17, 18, 19, 20, 21, 22, 24 ns
tRP	Row Precharge Time	15, 16, 17, 18, 19, 20, 21, 22, 24 ns
tRAS	Active to Precharge Delay	35, 36, 37, 38, 39, 40, 41, 42, 44 ns
tRC	Row Cycle Time	50, 52, 54, 56, 58, 60, 62, 64, 68 ns
tRFC	Refresh Cycle Time	350 ns (for 8K refresh cycles)
tRRD	Row Active to Row Active Delay	6, 7, 8, 9, 10 ns
tWTR	Write to Read Delay	4, 5, 6, 7, 8 ns
tRTP	Read to Precharge Delay	4, 5, 6, 7, 8 ns
VREFD	Differential Reference Voltage	0.5VDD 卤 0.05V
VREFCA	Command Address Reference Voltage	0.5VDDQ 卤 0.05V
VREFDQ	Data Input/Output Reference Voltage	0.5VDDQ 卤 0.05V
Power Consumption	Typical Power Consumption	2.5W (Active) 0.5W (Idle)
ECC Support	Error Correction Code Support	No
Refresh Rate	Refresh Rate	8K or 16K refresh cycles per 64ms
JEDEC Compliance	JEDEC Standard Compliance	JESD79-4B

Instructions for Use:

1. Power Supply:

   • Ensure that the supply voltages VDD and VDDQ are within the specified range of 1.2V 卤 0.1V.
   • Use decoupling capacitors close to the power pins to minimize noise and ensure stable operation.

2. Signal Integrity:

   • Use controlled impedance traces for high-speed signals to maintain signal integrity.
   • Terminate differential pairs and high-speed data lines as recommended by the PCB design guidelines.

3. Timing Parameters:

   • Configure the memory controller to match the timing parameters (CAS latency, tRCD, tRP, etc.) supported by the K4G41325FC-HC04.
   • Ensure that the memory controller can handle the maximum data rate of 2133 MT/s.

4. Thermal Management:

   • Provide adequate cooling to keep the operating temperature within the specified range.
   • Use heat sinks or thermal vias if necessary to dissipate heat effectively.

5. Initialization:

   • Follow the initialization sequence as outlined in the JEDEC standard JESD79-4B to configure the memory device correctly.
   • Perform a memory reset and mode register set (MRS) commands during initialization.

6. Refresh:

   • Implement the required refresh cycles (8K or 16K) every 64ms to prevent data loss.
   • Ensure that the refresh operations do not interfere with normal memory operations.

7. Testing and Validation:

   • Test the memory device under various conditions to ensure reliable operation.
   • Validate the memory performance using standard memory test patterns and tools.

By following these instructions, you can ensure optimal performance and reliability of the K4G41325FC-HC04 DDR4 SDRAM.

(For reference only)