2N3716

2N3716


Specifications
Details

BUY 2N3716 https://www.utsource.net/itm/p/12610124.html

Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V(BR)CEO - - 30 V IC = 150mA, TC = 25掳C
Emitter-Base Voltage V(BR)EBO - - 6 V IE = 5mA, TC = 25掳C
Collector-Base Voltage V(BR)CBO - - 30 V IC = 150mA, TC = 25掳C
Collector Current IC - - 150 mA VCE = 30V, TC = 25掳C
Base Current IB - - 15 mA VCE = 30V, TC = 25掳C
Power Dissipation PD - - 625 mW TC = 25掳C
Forward Current Transfer Ratio hFE 40 100 400 - IC = 10mA, VCE = 10V, TC = 25掳C

Instructions for Use:

  1. Handling Precautions: The 2N3716 is sensitive to electrostatic discharge (ESD). Use appropriate precautions when handling the device.
  2. Mounting: Ensure that the mounting surfaces are clean and free from contaminants. Proper heat sinking may be necessary depending on the application.
  3. Operating Temperature Range: The device is designed to operate within a temperature range of -65掳C to +150掳C.
  4. Biasing: Ensure correct biasing of the base-emitter junction to avoid damage or excessive power dissipation.
  5. Storage: Store in a dry environment away from direct sunlight and extreme temperatures.
  6. Testing: When testing the device, adhere strictly to the maximum ratings specified to prevent damage.
(For reference only)

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