Details
BUY P60NF03L https://www.utsource.net/itm/p/12610144.html
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | Maximum drain-source voltage | ||
| Gate-Source Voltage | VGS | -10 | 10 | V | Maximum gate-source voltage | |
| Continuous Drain Current | IDS | 9.5 | A | Continuous drain current at TC = 25掳C | ||
| Pulse Drain Current | IDP | 40 | A | Pulse drain current (t < 10 渭s, TC = 25掳C) | ||
| Power Dissipation | PD | 35 | W | Total power dissipation at TC = 25掳C | ||
| Junction Temperature | TJ | -55 | 150 | 掳C | Operating junction temperature range | |
| Storage Temperature | TSTG | -55 | 150 | 掳C | Storage temperature range |
Instructions for Use:
Handling Precautions:
- The P60NF03L is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
Mounting:
- Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table to prevent damage to the device.
- Operate within the recommended operating conditions for optimal performance.
Gate Drive:
- Apply appropriate gate drive voltages to ensure reliable turn-on and turn-off of the device. Avoid excessive gate-source voltages to prevent gate oxide damage.
Testing:
- When testing the device, ensure that all parameters are within the specified limits to avoid inaccurate results or device failure.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat. Adhere to the storage temperature range provided.
Soldering:
- Follow recommended soldering profiles to avoid thermal shock which can lead to internal damage.
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