P60NF03L

P60NF03L


Specifications
Details

BUY P60NF03L https://www.utsource.net/itm/p/12610144.html

Parameter Symbol Min Typ Max Unit Description
Drain-Source Voltage VDS 60 V Maximum drain-source voltage
Gate-Source Voltage VGS -10 10 V Maximum gate-source voltage
Continuous Drain Current IDS 9.5 A Continuous drain current at TC = 25掳C
Pulse Drain Current IDP 40 A Pulse drain current (t < 10 渭s, TC = 25掳C)
Power Dissipation PD 35 W Total power dissipation at TC = 25掳C
Junction Temperature TJ -55 150 掳C Operating junction temperature range
Storage Temperature TSTG -55 150 掳C Storage temperature range

Instructions for Use:

  1. Handling Precautions:

    • The P60NF03L is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
  2. Mounting:

    • Ensure the device is mounted on a suitable heatsink if operating near maximum power dissipation to maintain junction temperature within specified limits.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table to prevent damage to the device.
    • Operate within the recommended operating conditions for optimal performance.
  4. Gate Drive:

    • Apply appropriate gate drive voltages to ensure reliable turn-on and turn-off of the device. Avoid excessive gate-source voltages to prevent gate oxide damage.
  5. Testing:

    • When testing the device, ensure that all parameters are within the specified limits to avoid inaccurate results or device failure.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat. Adhere to the storage temperature range provided.
  7. Soldering:

    • Follow recommended soldering profiles to avoid thermal shock which can lead to internal damage.
(For reference only)

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