Details

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BUY FGPF30N45T https://www.utsource.net/itm/p/12610162.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	450	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	30	-	A	Tc = 25掳C
Pulse Drain Current	IDpeak	-	180	-	A	tp = 10 ms, ID = 30 A
Total Power Dissipation	PTOT	-	360	-	W	Tc = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	0.5	-	掳C/W

Instructions for Use:

1. Voltage Ratings:

   • Ensure that the drain-source voltage (V_DS) does not exceed 450V.
   • The gate-source voltage (V_GS) should be within 卤20V.

2. Current Ratings:

   • The continuous drain current (I_D) should not exceed 30A at a case temperature (Tc) of 25掳C.
   • For pulse applications, the peak drain current (I_Dpeak) can reach up to 180A for a pulse duration (t_p) of 10 ms, provided the continuous drain current is 30A.

3. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 360W at a case temperature (Tc) of 25掳C.

4. Temperature Considerations:

   • The junction temperature (T_J) must not exceed 175掳C.
   • Store the device within the storage temperature range (T_STG) of -55掳C to 150掳C.

5. Thermal Management:

   • Use appropriate heat sinks or cooling methods to manage the thermal resistance (R_胃JC) of 0.5掳C/W to prevent overheating.

6. Handling Precautions:

   • Handle the device with care to avoid mechanical damage.
   • Follow proper ESD (Electrostatic Discharge) precautions to prevent damage to the gate oxide.

7. Mounting:

   • Ensure proper mounting to the heatsink to maintain good thermal contact and effective heat dissipation.

8. Testing:

   • Perform all tests and measurements under controlled conditions to ensure accurate results and device safety.

(For reference only)