Details

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BUY 41LF https://www.utsource.net/itm/p/12610169.html

Parameter	Description	Value
Part Number	Device Identifier	41LF
Type	Memory Type	EEPROM
Capacity	Storage Capacity	128 Kbits
Organization	Memory Organization	16K x 8
Vcc (Operating)	Supply Voltage (Operating)	2.5V to 5.5V
Vpp (Programming)	Programming Voltage	12.5V
Icc (Active)	Active Current Consumption	5mA
Icc (Standby)	Standby Current Consumption	1渭A
Access Time	Access Time	70ns
Write Cycle	Write Cycle Time	5ms
Endurance	Write/Erasure Cycles	1,000,000
Data Retention	Data Retention Time	10 years
Operating Temp.	Operating Temperature Range	-40掳C to +85掳C
Package	Package Type	SOIC-8

Instructions for Use

1. Power Supply:

   • Connect the Vcc pin to a supply voltage between 2.5V and 5.5V.
   • Connect the Vss pin to ground.

2. Programming:

   • Apply the programming voltage (Vpp) of 12.5V to the appropriate pin during write operations.
   • Ensure that the write cycle time of 5ms is observed to avoid data corruption.

3. Reading:

   • Apply the appropriate address to the address lines.
   • The data will be available on the data lines after the access time of 70ns.

4. Write Operations:

   • Before writing, ensure the device is in write mode by setting the necessary control signals.
   • Follow the sequence of applying the address, data, and write enable signals.
   • Wait for the write cycle to complete before performing any other operations.

5. Standby Mode:

   • To minimize power consumption, place the device in standby mode when not in use.
   • This can be done by setting the chip select (CS) and output enable (OE) pins to high.

6. Temperature Considerations:

   • Ensure the operating temperature remains within the range of -40掳C to +85掳C to maintain reliable operation.

7. Handling:

   • Handle the device with care to avoid static discharge, which can damage the internal circuitry.
   • Use proper ESD protection measures during handling and installation.

8. Storage:

   • Store the device in a dry, cool environment to ensure long-term data retention and reliability.

9. Endurance and Data Retention:

   • The device is rated for 1,000,000 write/erase cycles and has a data retention period of 10 years under normal operating conditions.

(For reference only)