Details

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BUY FGH40T65SHDF_F155 https://www.utsource.net/itm/p/12610173.html

Parameter	Value	Unit
Device Type	MOSFET	-
Package	TO-247	-
VDS (Max Drain-Source Voltage)	650	V
RDS(on) @ VGS=10V	0.048	惟
ID (Continuous Drain Current)	40	A
Power Dissipation	155	W
Gate Charge	95	nC
Input Capacitance	1730	pF
Operating Temperature	-55 to 150	掳C

Instructions:

1. Mounting: Ensure the FGH40T65SHDF_F155 is mounted on a heatsink or PCB with adequate thermal management to handle up to 155W of power dissipation.
2. Electrical Connections: Connect the drain, source, and gate terminals correctly. The device can handle continuous drain currents up to 40A.
3. Voltage Handling: Do not exceed the maximum drain-source voltage of 650V.
4. Thermal Monitoring: Regularly monitor the operating temperature to ensure it stays within the -55掳C to 150掳C range.
5. Gate Drive: Apply appropriate gate drive voltage to achieve the specified RDS(on) of 0.048惟 at VGS=10V.
6. Storage: Store in a dry, cool place away from direct sunlight and sources of heat when not in use.

(For reference only)