Details
BUY MTP1N60E https://www.utsource.net/itm/p/12610174.html
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Maximum Drain Voltage | VDS | - | - | 600 | V | |
| Maximum Gate-to-Source Voltage | VGS | -15 | - | 15 | V | |
| Maximum Drain Current (Pulsed) | ID(p) | - | - | 24 | A | tp = 10 渭s, IG = 3 A, Tj = 25掳C |
| Maximum Drain Current (Continuous) | ID(cont) | - | - | 7.2 | A | TC = 25掳C |
| Maximum Power Dissipation | PTOT | - | - | 100 | W | TC = 25掳C |
| Junction Temperature | Tj | -55 | - | 150 | 掳C | |
| Storage Temperature | Tstg | -55 | - | 150 | 掳C | |
| Total Gate Charge | QG | - | 138 | - | nC | ID = 7.2 A, VGS = 15 V, Tj = 25掳C |
| Input Capacitance | Ciss | - | 1900 | - | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz |
| Output Capacitance | Coss | - | 100 | - | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 50 | - | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz |
| On-State Resistance | RDS(on) | - | 1.4 | - | 惟 | VGS = 10 V, ID = 7.2 A, Tj = 25掳C |
| Threshold Voltage | VGS(th) | 2.0 | 3.0 | 4.0 | V | ID = 250 渭A, Tj = 25掳C |
Instructions for Use:
Handling Precautions:
- Handle the MTP1N60E with care to avoid damage to the leads and body.
- Use proper ESD protection to prevent damage from static electricity.
Mounting:
- Ensure that the mounting surface is clean and flat.
- Apply thermal paste or a thermal pad between the device and the heatsink to improve heat dissipation.
- Tighten the mounting screws to the recommended torque specifications to ensure good thermal contact.
Electrical Connections:
- Connect the drain (D), gate (G), and source (S) terminals correctly to avoid short circuits.
- Use short, low-inductance leads to minimize parasitic inductance and improve performance.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature within the specified range.
- Monitor the temperature during operation and use a heatsink if necessary.
Gate Drive:
- Use a gate drive circuit that can provide sufficient current to charge and discharge the gate capacitance quickly.
- Ensure the gate voltage is within the specified limits to avoid damage to the device.
Overcurrent Protection:
- Implement overcurrent protection to prevent damage from excessive drain current.
- Use a current-limiting resistor or a current-sensing circuit to monitor the drain current.
Storage:
- Store the device in a dry, cool place away from direct sunlight and sources of heat.
- Keep the device in its original packaging until ready for use to protect it from moisture and static.
Testing:
- Test the device in a controlled environment to ensure it meets the specified parameters.
- Use appropriate test equipment and follow safety guidelines to avoid injury or damage to the device.
For more detailed information, refer to the datasheet provided by the manufacturer.
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