Details

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BUY TC551001CFT-70L https://www.utsource.net/itm/p/12610177.html

Parameter	Description	Value
Device Type	Non-Volatile Static RAM (NVSRAM)	-
Density	Memory Density	1 Mbit (128K x 8)
Package	Package Type	TSSOP-24 (Thin Small Outline Package)
Supply Voltage (Vcc)	Operating Supply Voltage	2.7 V to 3.6 V
Standby Current (Icc)	Typical Standby Current	1 渭A (max 5 渭A)
Active Current (Icc)	Typical Active Current	5 mA (max 10 mA)
Access Time (tAA)	Access Time	70 ns (max)
Data Retention	Data Retention at 85掳C	10 years
Operating Temperature Range (Toper)	Operating Temperature	-40掳C to +85掳C
Storage Temperature Range (Tstg)	Storage Temperature	-65掳C to +150掳C
Write Cycle Time (tWC)	Write Cycle Time	100 渭s (max)
Write Enable Setup Time (tWES)	Write Enable Setup Time	20 ns (min)
Write Enable Hold Time (tWEH)	Write Enable Hold Time	10 ns (min)
Output Enable Setup Time (tOES)	Output Enable Setup Time	20 ns (min)
Output Enable Hold Time (tOEH)	Output Enable Hold Time	10 ns (min)
Chip Enable Setup Time (tCES)	Chip Enable Setup Time	20 ns (min)
Chip Enable Hold Time (tCEH)	Chip Enable Hold Time	10 ns (min)
Address Access Time (tAC)	Address Access Time	15 ns (min)
Data Hold Time (tOH)	Data Hold Time	5 ns (min)
Power-down Time (tPD)	Power-down Time	100 ns (min)
Write Protect Pin (WP)	Write Protect Pin Function	Active Low, Disable Write Operations
Package Marking	Package Marking	TC551001CFT-70L

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
   • Connect the ground (GND) pin to a stable ground reference.

2. Signal Timing:

   • Adhere to the timing parameters provided, especially for setup and hold times, to ensure reliable operation.
   • Use appropriate pull-up or pull-down resistors for control signals (e.g., CE#, OE#, WE#, WP#) as needed.

3. Write Operations:

   • To perform a write operation, set the Write Enable (WE#) pin low and provide the address and data.
   • Ensure the Write Cycle Time (tWC) is respected to avoid data corruption.

4. Read Operations:

   • To perform a read operation, set the Output Enable (OE#) pin low and provide the address.
   • Ensure the Access Time (tAA) is respected to allow the device to retrieve and output the data.

5. Write Protection:

   • Set the Write Protect (WP#) pin high to enable write operations.
   • Set the WP# pin low to disable write operations and protect the memory contents.

6. Power Management:

   • Use the Chip Enable (CE#) pin to put the device into a low-power mode by setting it high.
   • Ensure the Power-down Time (tPD) is respected when transitioning between active and power-down modes.

7. Environmental Conditions:

   • Operate the device within the specified temperature ranges to ensure reliable performance and data retention.
   • Store the device in a controlled environment to prevent damage from extreme temperatures.

8. Handling:

   • Handle the device with care to avoid static discharge and physical damage.
   • Follow proper ESD (Electrostatic Discharge) precautions during handling and installation.

9. Testing:

   • Verify the functionality of the device using a known good test pattern to ensure correct operation.
   • Refer to the datasheet for detailed test procedures and recommended test vectors.

(For reference only)