Details

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BUY F10NC15M https://www.utsource.net/itm/p/12610189.html

Parameter	Symbol	Min	Typ	Max	Unit
Breakdown Voltage	BV	-	650	-	V
Continuous Drain Current	ID	-	15	-	A
Gate-Source Voltage	VGS	-10	-	10	V
Drain-Source On-State Resistance	RDS(on)	-	0.035	-	惟 at VGS = 10V, ID = 15A
Input Capacitance	Ciss	-	2900	-	pF
Output Capacitance	Coff	-	850	-	pF
Reverse Transfer Capacitance	Crss	-	1400	-	pF
Total Power Dissipation	PD	-	-	180	W
Junction Temperature	Tj	-55	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The F10NC15M is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
   • Avoid exposing the device to temperatures outside the specified operating range.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if continuous operation at high currents or power dissipation is required.
   • Use thermal grease between the device and heatsink to improve heat transfer.

3. Biasing:

   • Apply the gate-source voltage (VGS) within the specified range to avoid damage.
   • For optimal performance, use VGS values close to the typical value (10V).

4. Operation:

   • Do not exceed the maximum drain current (ID) or the total power dissipation (PD).
   • Monitor the junction temperature (Tj) to ensure it remains within safe limits.

5. Testing:

   • When testing the device, use appropriate test equipment and follow safety guidelines.
   • Measure the drain-source on-state resistance (RDS(on)) to verify proper operation.

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

(For reference only)