2N4392CLB

2N4392CLB


Specifications
Details

BUY 2N4392CLB https://www.utsource.net/itm/p/12610195.html

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Continuous Collector Current (IC) 600 mA
Power Dissipation (PD) 625 mW
DC Current Gain (hFE) 30 to 300 -
Transition Frequency (fT) 120 MHz
Operating Temperature Range (TJ) -65 to 150 掳C

Instructions for Use:

  1. Handling Precautions: The 2N4392CLB is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
  2. Mounting: Ensure that the mounting area is clean and free from contaminants. Apply thermal paste if necessary for better heat dissipation.
  3. Biasing: Proper biasing of the base-emitter junction is critical for optimal performance. Refer to application circuits for recommended biasing networks.
  4. Heat Management: Keep the operating temperature within specified limits. Use heat sinks if continuous operation at high current or power levels is anticipated.
  5. Storage: Store in a cool, dry place away from direct sunlight and sources of heat.
  6. Soldering: If soldering, ensure temperatures do not exceed the maximum junction temperature to avoid damage to the device.
(For reference only)

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