Details

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BUY 2SC735-Y https://www.utsource.net/itm/p/12610206.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	40	V
Collector-Base Voltage	VCBO	-	-	60	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	1	A
Base Current	IB	-	-	0.1	A
Power Dissipation	PD	-	-	350	mW	Ta = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	Tstg	-55	-	150	掳C

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heat sink if operating near maximum power dissipation limits.
2. Biasing: Proper biasing of the base-emitter junction is essential to avoid excessive base current which can lead to thermal runaway.
3. Voltage Ratings: Do not exceed the maximum voltage ratings (VCEO, VCBO, VEBO) as this can cause immediate damage to the transistor.
4. Operating Temperature: Keep the junction temperature within the specified range to ensure reliable operation and longevity.
5. Storage: Store in a dry environment within the specified storage temperature range to prevent damage from moisture or extreme temperatures.
6. Handling: Handle with care to avoid static discharge; use appropriate ESD protection measures.

(For reference only)