Details

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BUY 2N5129 https://www.utsource.net/itm/p/12610223.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage (Reverse)	V(BR)CEO	-	-	100	V
Emitter-Base Voltage (Reverse)	V(BR)EBO	-	-	6	V
Collector-Base Voltage (Reverse)	V(BR)CBO	-	-	75	V
Collector Current (Continuous)	IC	-	500	800	mA
Collector Current (Pulse)	ICM	-	-	2000	mA
Base Current (Continuous)	IB	-	10	50	mA
Power Dissipation	Ptot	-	-	625	mW
Junction Temperature	Tj	-55	-	150	掳C
Storage Temperature	Tstg	-65	-	150	掳C
Transition Frequency	ft	-	300	-	MHz
Current Gain (DC)	hFE	100	300	700	-
Current Gain-Bandwidth Product	fT * hFE	-	90	-	GHz

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2N5129 with care to avoid mechanical damage.
   • Ensure that the device is properly mounted on a heatsink if operating at high power levels to maintain junction temperature within safe limits.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly according to the circuit diagram.
   • Use appropriate wire gauges to handle the current ratings.

3. Biasing:

   • Bias the transistor to operate in the active region for linear amplification.
   • For switching applications, ensure the transistor is fully saturated or cut off to minimize power dissipation.

4. Thermal Management:

   • Monitor the junction temperature to prevent overheating.
   • Use thermal paste between the transistor and heatsink for better heat transfer.

5. Storage:

   • Store the 2N5129 in a dry, cool place away from direct sunlight and extreme temperatures.
   • Avoid exposing the device to static electricity.

6. Testing:

   • Use a multimeter to check for continuity and correct polarity before installation.
   • Test the transistor in a controlled environment to ensure it meets the specified parameters.

7. Safety:

   • Always disconnect power before making any changes to the circuit.
   • Use appropriate safety equipment when working with high voltages.

By following these guidelines, you can ensure reliable and efficient operation of the 2N5129 transistor.

(For reference only)