Details

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BUY H0009.02NLT https://www.utsource.net/itm/p/12610247.html

Parameter	Description
Part Number	H0009.02NLT
Type	N-Channel MOSFET
VDS (Drain-Source Voltage)	卤60V
RDS(on) (On-Resistance)	4.5 m惟 @ VGS = 10V, ID = 30A
ID (Continuous Drain Current)	30A @ TC = 25掳C
PD (Total Power Dissipation)	170W @ TC = 25掳C
VGS (Gate-Source Voltage)	卤20V
fT (Transistor Forward Transistion Frequency)	2.8 MHz
Qg (Total Gate Charge)	65 nC
Package Type	TO-220
Operating Temperature Range	-55掳C to +150掳C

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.

2. Mounting and Assembly:

   • Ensure proper heat sinking when operating at high currents or power levels to maintain junction temperature within specified limits.
   • Follow manufacturer guidelines for soldering profiles to prevent thermal shock.

3. Biasing and Drive Requirements:

   • Apply gate voltages within the specified range to ensure reliable operation and prevent damage.
   • Use a low-inductance gate drive circuit to minimize switching losses and electromagnetic interference (EMI).

4. Application Considerations:

   • Suitable for use in switching power supplies, motor control circuits, and other high-efficiency power conversion applications.
   • Verify that the maximum ratings are not exceeded under all operating conditions.

(For reference only)