Details

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BUY BDW42 https://www.utsource.net/itm/p/12610256.html

Parameter	Symbol	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)	-	400	-	V
Maximum Repetitive Peak Reverse Voltage	V(RRM)	-	400	-	V
Maximum Average Forward Rectified Current (Tc=75掳C)	IF(AV)	-	1.0	-	A
Non-repetitive Peak Forward Surge Current (Tj=25掳C, t=8.3ms)	IFSM	-	30	-	A
Forward Voltage Drop at Rated Current (IF=1A)	VF	-	1.0	1.2	V
Reverse Leakage Current at 25掳C (VR=400V)	IR	-	5	50	渭A
Junction Capacitance (VR=0V, f=1MHz)	Cj	-	15	-	pF
Operating Junction Temperature Range	Tj	-65	-	150	掳C
Storage Temperature Range	Tstg	-65	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use appropriate mounting hardware to secure the device.

2. Electrical Connections:

   • Connect the anode and cathode terminals correctly to avoid reverse biasing the diode beyond its rated voltage.
   • Use wires or connectors that can handle the maximum current ratings.

3. Surge Handling:

   • The device can handle non-repetitive peak forward surge currents up to 30A for short durations (e.g., 8.3ms). Ensure that surge conditions do not exceed these limits.

4. Thermal Management:

   • Monitor the operating temperature to ensure it does not exceed 150掳C. Use thermal management techniques such as heatsinks or cooling fans if necessary.

5. Reverse Bias:

   • Avoid applying continuous reverse voltages higher than the rated breakdown voltage to prevent damage.

6. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range (-65掳C to 150掳C).

7. Handling:

   • Handle with care to avoid mechanical stress on the leads and body of the device.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

(For reference only)