Details

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BUY IPW60R099C6 TO-247 https://www.utsource.net/itm/p/12610258.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Continuous Drain Current	ID	TC = 25掳C	-	60	-	A
Pulse Drain Current	IGM	t = 10 ms, Repetition Rate = 1%	-	300	-	A
Gate-Source Voltage	VGS	-	-20	0	20	V
Drain-Source Breakdown Voltage	BVdss	ID = 250 渭A	650	-	-	V
RDS(on) at TJ=25掳C	RDS(on)	VGS = 10V, ID = 40A	-	9.9	-	m惟
RDS(on) at TJ=125掳C	RDS(on)	VGS = 10V, ID = 40A	-	15	-	m惟
Total Switching Energy Loss	ETSW	VDS = 450V, ID = 40A, fSW = 100kHz	-	18.7	-	mJ

Instructions for Use:

1. Handling Precautions:

   • Handle the IPW60R099C6 with care to avoid damage to the leads and body.
   • Ensure proper anti-static precautions are taken as MOSFETs are sensitive to electrostatic discharge (ESD).

2. Mounting:

   • Mount the device on a heat sink if operating at high currents or in high ambient temperatures.
   • Use thermal grease between the device and the heat sink for efficient heat dissipation.

3. Operating Conditions:

   • Ensure that the operating voltage does not exceed the rated drain-source breakdown voltage (BVdss).
   • Keep the junction temperature within specified limits by adequate cooling measures.

4. Pulse Operation:

   • For pulse applications, ensure the pulse width and repetition rate do not exceed the rated pulse current (IGM).

5. Storage:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Follow recommended storage conditions to prevent degradation of performance.

6. Testing:

   • Use appropriate test equipment calibrated to industry standards for accurate parameter measurement.
   • Refer to the datasheet for detailed test conditions and methods.

(For reference only)