Details

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BUY 2SC4163 https://www.utsource.net/itm/p/12610267.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 50 mA, IB = 0 mA
Base-Emitter Voltage	VBE	-	0.7	-	V	IC = 50 mA, IB = 5 mA
Collector Current	IC	-	-	100	mA	VCE = 30 V
Base Current	IB	-	-	5	mA	VCE = 30 V, IC = 50 mA
DC Current Gain	hFE	30	100	300	-	IC = 50 mA, VCE = 10 V
Transition Frequency	fT	-	200	-	MHz	IC = 10 mA, VCE = 10 V
Power Dissipation	PT	-	-	300	mW	TA = 25掳C
Operating Temperature	TOP	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the transistor.
   • Use appropriate heat sinks if operating at high power levels or in high-temperature environments.

2. Mounting:

   • Ensure proper alignment and secure mounting to avoid mechanical stress on the leads.
   • Soldering temperature should not exceed 300掳C for more than 10 seconds.

3. Biasing:

   • For optimal performance, bias the base current (I_B) to achieve the desired collector current (I_C) within the specified range.
   • Use a base resistor to limit the base current and protect the transistor from overcurrent conditions.

4. Testing:

   • When testing the transistor, use a multimeter to measure the base-emitter voltage (V_BE) and ensure it is within the typical range.
   • Verify the collector-emitter voltage (V_CE) and collector current (I_C) to ensure the transistor is functioning correctly.

5. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Keep the leads free from corrosion by avoiding exposure to corrosive substances.

6. Applications:

   • The 2SC4163 is suitable for general-purpose amplification and switching applications in circuits requiring moderate power handling and high-frequency operation.

(For reference only)