Details

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BUY LND150N8-G https://www.utsource.net/itm/p/12610281.html

Parameter	Symbol	Value	Unit	Conditions
Maximum Drain Voltage	VDSS	80	V
Maximum Gate Source Voltage	VGS	卤20	V
Continuous Drain Current	ID	15	A	TC = 25掳C
Pulse Drain Current	Ipp	60	A	tp = 10 渭s, TC = 25掳C
Gate Charge	Qg	4.7	nC	VGS = 10V, IDS = 10A
Input Capacitance	Ciss	1000	pF	VDS = 10V, f = 1 MHz
Output Capacitance	Coff	35	pF	VDS = 10V, f = 1 MHz
Reverse Transfer Capacitance	Crss	35	pF	VDS = 10V, f = 1 MHz
Total Switching Energy	Ets	90	渭J	RL = 4惟, VDS = 40V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the continuous drain current.
   • Handle with care to avoid damage to the gate terminal which is sensitive to electrostatic discharge (ESD).

2. Biasing Conditions:

   • Apply gate-source voltage within the specified limits to prevent damage.
   • Ensure that the drain voltage does not exceed the maximum rated voltage.

3. Operating Temperature:

   • The device is designed for operation at temperatures up to the junction temperature limit. Ensure adequate cooling if operating near these limits.

4. Pulse Operation:

   • For pulse applications, ensure the pulse duration and frequency are within the specified conditions to avoid overheating.

5. Capacitance Considerations:

   • Take into account the input, output, and reverse transfer capacitances when designing circuits to minimize switching losses.

6. Energy Dissipation:

   • Monitor the total switching energy in applications where rapid switching occurs to prevent excessive power dissipation.

7. Storage:

   • Store in a dry environment and follow anti-static precautions to protect the component from damage.

(For reference only)