Details

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BUY SI4564DY-T1-GE3 https://www.utsource.net/itm/p/12610291.html

Parameter	Description	Value	Unit
Part Number	Part number	SI4564DY-T1-GE3	-
Type	Type of device	N-Channel MOSFET	-
Package	Package type	TO-252 (DPAK)	-
VDSS	Drain-to-source voltage	60	V
RDS(on)	On-state resistance at VGS = 4.5V, ID = 8A	7.5	m惟
ID	Continuous drain current (TC = 25掳C)	8	A
PD	Power dissipation (TA = 25掳C)	2.2	W
VGS(th)	Gate threshold voltage	1.0 to 2.5	V
Qg	Total gate charge	28	nC
fT	Transition frequency	200	MHz
TJ	Junction temperature range	-55 to 150	掳C
TSTG	Storage temperature range	-65 to 150	掳C

Instructions for Use

1. Handling Precautions:

   • ESD Sensitivity: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
   • Soldering Temperature: Ensure that the soldering temperature does not exceed 260掳C for more than 10 seconds.

2. Mounting:

   • Thermal Management: Ensure adequate heat sinking to maintain the junction temperature within the specified range.
   • Orientation: Mount the device with the correct orientation to avoid damage.

3. Operating Conditions:

   • Voltage Limits: Do not exceed the maximum ratings for V_DSS, V_GS, and I_D.
   • Power Dissipation: Ensure that the power dissipation does not exceed the maximum rating by using appropriate heatsinking or forced air cooling.

4. Storage:

   • Temperature and Humidity: Store the device in a dry environment within the specified storage temperature range.
   • Static Protection: Store the device in static-protective packaging to prevent ESD damage.

5. Testing:

   • Initial Testing: Perform initial testing to verify the device parameters before integrating it into the final application.
   • Functional Testing: Conduct functional testing under actual operating conditions to ensure reliable performance.

6. Documentation:

   • Data Sheet: Refer to the latest data sheet for detailed specifications and additional information.
   • Application Notes: Consult application notes for specific design considerations and circuit recommendations.

(For reference only)