Details

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BUY IRG4PH30K https://www.utsource.net/itm/p/12610293.html

Parameter	Symbol	Value	Unit
Maximum Drain-Source Voltage	VDS(max)	600	V
Maximum Gate-Source Voltage	VGS(max)	卤20	V
Continuous Drain Current (Tc = 25掳C)	ID(25掳C)	30	A
Continuous Drain Current (Tc = 100掳C)	ID(100掳C)	20	A
Pulse Drain Current (tp = 10 渭s, IG = 8 A)	IDm	120	A
Total Power Dissipation (Tc = 25掳C)	PTOT(25掳C)	270	W
Total Power Dissipation (Tc = 100掳C)	PTOT(100掳C)	180	W
Junction Temperature	TJ	-55 to +175	掳C
Storage Temperature Range	TSTG	-55 to +150	掳C
Thermal Resistance, Junction to Case	R胃JC	0.5	掳C/W
Input Capacitance (VGS = 15 V, f = 1 MHz)	Ciss	1900	pF
Output Capacitance (VDS = 25 V, f = 1 MHz)	Coss	280	pF
Reverse Transfer Capacitance (VDS = 25 V, ID = 1 A, f = 1 MHz)	Crss	400	pF
Turn-On Delay Time (ID = 20 A, VGS = 15 V)	td(on)	34	ns
Rise Time (ID = 20 A, VGS = 15 V)	tr	48	ns
Turn-Off Delay Time (ID = 20 A, VGS = 15 V)	td(off)	28	ns
Fall Time (ID = 20 A, VGS = 15 V)	tf	40	ns

Instructions for Use:

1. Handling Precautions:

   • Handle the IRG4PH30K with care to avoid static damage.
   • Ensure that all connections are secure and free from contaminants.

2. Mounting:

   • Use a heat sink to dissipate heat effectively, especially when operating at high power levels.
   • Apply thermal compound between the device and the heat sink for better thermal conductivity.

3. Biasing:

   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum rating of 卤20 V.
   • For optimal performance, use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Operating Conditions:

   • Keep the junction temperature within the specified range (-55掳C to +175掳C).
   • Monitor the drain current and power dissipation to prevent overheating and potential damage.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and moisture.
   • Follow the recommended storage temperature range (-55掳C to +150掳C).

6. Testing:

   • Use appropriate test equipment and procedures to ensure accurate measurements.
   • Test the device under controlled conditions to avoid exceeding its maximum ratings.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use protective gear and ensure proper grounding to prevent electrical shock.

By adhering to these parameters and instructions, you can ensure reliable and efficient operation of the IRG4PH30K MOSFET.

(For reference only)