Details

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BUY 2N6397 https://www.utsource.net/itm/p/12610323.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCEO	400	V
Emitter-Base Voltage	VEBO	5	V
Collector-Base Voltage	VCBO	400	V
Continuous Collector Current	IC	15	A
Peak Collector Current	IC(peak)	30	A
Power Dissipation	PT	120	W
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	TSTG	-65 to +150	掳C
Transition Frequency	fT	4	MHz
Current Gain (hFE)	hFE	20 to 80	-
Collector-Emitter Saturation Voltage	VCE(sat)	2.0	V
Base-Emitter Saturation Voltage	VBE(sat)	2.5	V

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the high power dissipation.
   • Handle the device with care to avoid mechanical stress and damage.

2. Electrical Connections:

   • Connect the collector, base, and emitter terminals correctly to avoid reverse bias conditions that can lead to device failure.
   • Use appropriate wire gauges to handle the rated currents.

3. Thermal Management:

   • The junction temperature should not exceed 150掳C to prevent thermal runaway and ensure reliable operation.
   • Use thermal paste between the transistor and the heat sink to improve thermal conductivity.

4. Operating Conditions:

   • Operate within the specified voltage and current limits to avoid damage.
   • Ensure that the power dissipation does not exceed 120W to maintain safe operating conditions.

5. Storage:

   • Store the device in a dry, cool environment within the storage temperature range of -65掳C to +150掳C.
   • Avoid exposure to high humidity and corrosive environments.

6. Testing:

   • Use a multimeter or transistor tester to verify the device parameters before installation.
   • Test the device under controlled conditions to ensure it meets the required specifications.

7. Safety:

   • Always follow safety guidelines when handling high-power transistors.
   • Use appropriate protective equipment and grounding to prevent electrical shock.

(For reference only)