Details

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BUY 2SC4467 https://www.utsource.net/itm/p/12610324.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCE	-	-	80	V
Collector-Base Voltage	VCB	-	-	80	V
Emitter-Base Voltage	VEB	-5	-	5	V
Collector Current	IC	-	-	3	A
Base Current	IB	-	-	0.3	A
Power Dissipation	PT	-	-	65	W
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-65	-	150	掳C
Transition Frequency	fT	-	100	-	MHz

Instructions for Use:

1. Handling:

   • Handle the 2SC4467 with care to avoid static damage.
   • Ensure that the device is not exposed to temperatures outside the specified storage range.

2. Mounting:

   • Use appropriate heat sinks to manage the power dissipation and keep the junction temperature within the specified limits.
   • Ensure proper mechanical mounting to avoid stress on the leads.

3. Biasing:

   • Apply the base current (I_B) carefully to control the collector current (I_C) and prevent excessive power dissipation.
   • Ensure that the base-emitter voltage (V_EB) does not exceed the maximum rating.

4. Operation:

   • Operate the device within the specified voltage and current limits to avoid damage.
   • Monitor the junction temperature to ensure it remains below the maximum rated temperature.

5. Testing:

   • Use a suitable test setup to measure the device parameters.
   • Ensure that the test conditions (voltage, current, and temperature) are within the specified operating ranges.

6. Storage:

   • Store the 2SC4467 in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

(For reference only)