Details

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BUY BUV46C https://www.utsource.net/itm/p/12610336.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	600	-	V
Collector-Base Voltage	VCB	-	600	-	V
Emitter-Base Voltage	VEB	-	5	-	V	Reverse
Collector Current	IC	-	10	-	A	Continuous
Collector Current (Pulse)	IC(P)	-	25	-	A	tP = 10 ms, IF = 0.5 A
Power Dissipation	PT	-	125	-	W	TA = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance	RthJC	-	0.8	-	掳C/W	Case to Junction

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature below 150掳C.
   • Use thermal grease between the transistor and heat sink for better thermal conductivity.

2. Biasing:

   • Apply base current (I_B) sufficient to ensure the transistor is in saturation when required.
   • Avoid exceeding the maximum collector current (I_C) and power dissipation (P_T) ratings.

3. Handling:

   • Handle with care to avoid mechanical stress on the leads and body.
   • Use appropriate ESD protection to prevent damage from static electricity.

4. Storage:

   • Store in a dry, cool place within the specified storage temperature range (-55掳C to 150掳C).

5. Testing:

   • Use a suitable tester or circuit to verify the parameters under controlled conditions.
   • Ensure that the test conditions do not exceed the maximum ratings.

6. Pulsed Operation:

   • For pulsed applications, ensure that the pulse width and frequency do not cause the junction temperature to exceed the maximum allowable value.

7. Soldering:

   • Preheat the PCB to reduce thermal shock.
   • Solder quickly to avoid overheating the transistor.

8. Circuit Design:

   • Include appropriate protection circuits such as snubbers and clamping diodes to protect against voltage spikes and transient conditions.

(For reference only)