Details

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BUY STP80NF10FP https://www.utsource.net/itm/p/12610343.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-source on-resistance	RDS(on)	-	12.5	-	m惟	VGS = 10V, ID = 8A
Gate-source threshold voltage	VGS(th)	1.0	-	2.5	V	ID = 1mA
Continuous drain current	ID	-	-	80	A	TC = 25掳C
Power dissipation	PD	-	-	76	W	TC = 25掳C, 胃JA = 62.5掳C/W
Total gate charge	QG	-	35	-	nC	VDS = 100V, VGS = 10V, IDS = 40A
Input capacitance	Ciss	-	2000	-	pF	VDS = 10V
Output capacitance	Coss	-	450	-	pF	VDS = 10V
Reverse transfer capacitance	Crss	-	390	-	pF	VDS = 10V

Instructions for STP80NF10FP:

1. Mounting and Handling:

   • Handle with care to avoid damage to the leads and body.
   • Ensure proper heat sinking for efficient heat dissipation.

2. Electrical Connections:

   • Connect the source terminal to the power supply ground.
   • Connect the drain terminal to the load.
   • Apply a gate voltage (VGS) between 5V and 10V to turn the MOSFET on.

3. Operating Temperature:

   • Ensure the ambient temperature is within the operating range (-55掳C to +150掳C).
   • Monitor the junction temperature (TJ) to not exceed the maximum allowable limit.

4. Storage:

   • Store in a dry place away from direct sunlight.
   • Keep in original packaging until ready for use.

5. Safety Precautions:

   • Avoid exceeding the maximum ratings to prevent device failure.
   • Use appropriate protective equipment when handling high voltages.

6. Testing:

   • Test the device parameters using recommended test conditions to ensure reliable operation.
   • Perform continuity checks before applying power to the circuit.

(For reference only)