D808K013DPTP4

D808K013DPTP4


Specifications
Details

BUY D808K013DPTP4 https://www.utsource.net/itm/p/12610347.html

Parameter Description Value
Part Number Unique identifier for the component D808K013DPTP4
Manufacturer Company that produces the component Vishay
Series Family or series of components SiC Schottky Diodes
Type General category of the component Diode
Technology Manufacturing technology used Silicon Carbide (SiC)
Polarity Direction of current flow Unidirectional
Maximum Repetitive Peak Reverse Voltage (VRRM) Maximum reverse voltage the diode can withstand 650 V
Maximum Average Rectified Forward Current (IF(AV)) Continuous forward current at specified conditions 8 A
Peak Repetitive Forward Surge Current (IFSM) Maximum allowable surge current 240 A
Junction Operating Temperature (TJ) Range of temperatures for proper operation -55掳C to +175掳C
Storage Temperature (TSTG) Temperature range for storage -55掳C to +175掳C
Package Type Encapsulation type TO-220
Lead Finish Surface finish of the leads Matte Tin
Body Material Material composition of the body Ceramic and Plastic

Instructions:

  1. Mounting: Ensure proper heat sinking when mounting to handle thermal dissipation effectively.
  2. Handling: Use care to avoid mechanical damage to the leads and body during handling and installation.
  3. Soldering: Follow recommended soldering profiles to prevent thermal shock and ensure reliable connections.
  4. Storage: Store in a dry environment within the specified temperature range to maintain performance characteristics.
  5. Electrical Connections: Verify polarity before making electrical connections to avoid damage from reverse bias beyond rated limits.
  6. Inspection: Regularly inspect for signs of wear or damage, especially after exposure to harsh environments or prolonged use.
(For reference only)

View more about D808K013DPTP4 on main site