IR2153PBF,IR2153

IR2153PBF,IR2153


Specifications
SKU
12610353
Details

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Parameter IR2153PBF / IR2153
Device Type High Voltage Floating Gate MOSFET Driver
Supply Voltage (Vcc) 10V to 20V
Floating Supply Voltage (Vboot) 10V to 20V
Output Current (Iout) 卤1A (Typical)
Operating Temperature Range (Tamb) -40掳C to 125掳C
Propagation Delay (tpd) 60ns (Typical)
Matched Propagation Delay (tpdm) 10ns (Typical)
Undervoltage Lockout (UVLO) Threshold Vcc: 8.5V (Typical)
Maximum Operating Frequency 500kHz
Package Type SOIC-8
Pin Configuration 1. Vcc, 2. COM, 3. HO, 4. LO, 5. Vboot, 6. RT/CT, 7. FB, 8. GND

Instructions for Use

  1. Power Supply Connections:

    • Connect the Vcc pin to the positive supply voltage (10V to 20V).
    • Connect the COM pin to the ground (GND).
  2. High-Side Driver:

    • Connect the HO pin to the gate of the high-side MOSFET.
    • Connect the Vboot pin to the bootstrap capacitor, which is also connected between the source of the high-side MOSFET and the drain of the low-side MOSFET.
  3. Low-Side Driver:

    • Connect the LO pin to the gate of the low-side MOSFET.
  4. Oscillator Configuration:

    • Connect an external resistor (RT) and capacitor (CT) between the RT/CT pin and ground to set the oscillator frequency.
    • The frequency can be calculated using the formula: ( f = frac{1}{1.1 times R_T times C_T} ).
  5. Feedback Input:

    • Connect the FB pin to the feedback network to control the output voltage or current.
  6. Ground Connection:

    • Ensure that the GND pin is connected to the system ground.
  7. Undervoltage Lockout (UVLO):

    • The device will not operate if the Vcc voltage drops below the UVLO threshold (8.5V typical).
  8. Thermal Management:

    • Ensure proper heat dissipation by mounting the device on a heatsink if necessary, especially in high-power applications.
  9. Layout Considerations:

    • Keep the layout compact to minimize parasitic inductance and capacitance.
    • Use short and wide traces for power and ground connections to reduce resistance and inductance.
  10. Storage and Handling:

    • Store the device in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
(For reference only)

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