Details

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BUY 2SK190 https://www.utsource.net/itm/p/12610384.html

Parameter	Symbol	Value	Unit
Maximum Drain Voltage	VDS(max)	300	V
Maximum Gate-Source Voltage	VGS(max)	卤20	V
Maximum Drain Current	ID(max)	2.5	A
Maximum Power Dissipation	PD(max)	80	W
Gate Threshold Voltage	VGS(th)	2 to 4	V
Transconductance	gm	0.7 to 2.5	S
Input Capacitance	Ciss	1500	pF
Output Capacitance	Coss	300	pF
Reverse Transfer Capacitance	Crss	100	pF
Junction Temperature	TJ	-55 to +150	掳C
Storage Temperature	Tstg	-55 to +150	掳C

Instructions for Using 2SK190:

1. Handling Precautions:

   • Avoid exposing the device to excessive static electricity.
   • Use proper anti-static wrist straps and mats when handling the device.

2. Mounting:

   • Ensure good thermal contact with a heatsink to manage power dissipation.
   • Use thermal compound between the device and the heatsink for better heat transfer.

3. Biasing:

   • Apply the gate voltage (VGS) within the specified range to avoid damage.
   • Ensure the gate-source voltage does not exceed 卤20V.

4. Operating Conditions:

   • Operate the device within the maximum drain voltage (300V) and drain current (2.5A) limits.
   • Keep the junction temperature within the specified range (-55掳C to +150掳C).

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Ensure the storage temperature is within the specified range (-55掳C to +150掳C).

6. Testing:

   • Use appropriate test equipment to measure parameters such as transconductance and capacitances.
   • Follow standard testing procedures to avoid damaging the device.

7. Soldering:

   • Use a controlled soldering process to avoid overheating the device.
   • Allow the device to cool down before applying power.

8. Circuit Design:

   • Design the circuit to include necessary protection components such as fuses and transient voltage suppressors.
   • Ensure the circuit layout minimizes parasitic inductances and capacitances.

(For reference only)