Details
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| Parameter | Description | Value |
|---|---|---|
| Part Number | Product identifier | UH860G |
| Type | Device type | MOSFET |
| Package | Encapsulation type | TO-220 |
| VDS (Max) | Drain-to-source voltage | 80V |
| ID (Max) | Continuous drain current | 57A |
| PD (Max) | Total power dissipation | 140W |
| RDS(on) (Max) | On-state resistance at specified conditions | 3.5m惟 |
| Qg (Total) | Total gate charge | 119nC |
| VGS(th) (Min/Max) | Gate threshold voltage | 2.0/4.0V |
| TJ (Max) | Maximum junction temperature | 175掳C |
| SOA (Single Pulse) | Safe operating area for single pulse | Refer to datasheet graph |
| Storage Temperature | Temperature range for storage | -55掳C to 150掳C |
Instructions for Use:
- Handling Precautions: The UH860G is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD protection measures.
- Mounting: Ensure proper heat sinking when mounting the device, especially in high-power applications to maintain operational temperatures within limits.
- Biasing: Apply gate voltages carefully to avoid exceeding VGS ratings which can cause immediate damage.
- Safe Operating Area (SOA): Review the SOA graph in the datasheet to ensure that the device operates within safe limits under all conditions.
- Storage and Environment: Store in a dry environment and avoid exposure to extreme temperatures outside the specified storage range.
- Testing: Perform initial testing at low power levels to verify correct operation before deploying in final applications.
- Refer to Datasheet: For detailed specifications and application notes, always refer to the latest version of the product datasheet provided by the manufacturer.
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