Details

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BUY VN7140ASTR https://www.utsource.net/itm/p/12610420.html

Parameter	Description	Value	Unit
Device Type	N-Channel Enhancement Mode Power MOSFET
Drain Source Voltage	Maximum Drain to Source Voltage	60	V
Continuous Drain Current	Continuous Drain Current at Tc=25掳C	40	A
Pulse Drain Current	Pulse Drain Current (10渭s, 1% Duty Cycle)	100	A
Gate Source Voltage	Maximum Gate to Source Voltage	卤20	V
Total Power Dissipation	Power Dissipation at Tc=25掳C	83.3	W
Junction Temperature	Maximum Operating Junction Temperature	175	掳C
Storage Temperature	Operating Temperature Range	-55 to +150	掳C
Package Type	TO-220 Full Pack

Instructions for VN7140ASTR:

1. Handling Precautions:

   • Use proper anti-static precautions when handling the device.
   • Avoid exposing the device to temperatures outside its specified operating range.

2. Mounting:

   • Ensure that the heatsink is properly attached if continuous operation near maximum power dissipation is expected.
   • Follow manufacturer guidelines for mounting torque and thermal interface materials.

3. Electrical Connections:

   • Connect the gate through a resistor to limit current during switching.
   • Ensure all connections are secure and free from corrosion or oxidation.

4. Operation:

   • Operate within the specified voltage and current limits to avoid damage.
   • Monitor junction temperature especially under high load conditions to prevent overheating.

5. Testing:

   • Perform initial testing with lower voltages and currents to ensure correct operation before full-scale deployment.
   • Regularly inspect connections and components for signs of wear or damage.

6. Storage:

   • Store in a dry, cool place away from direct sunlight and sources of heat.
   • Keep in original packaging until ready for use to protect against static discharge.

(For reference only)