Details

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BUY 2SK642 https://www.utsource.net/itm/p/12610445.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-to-Source Voltage	VDS	-	-	300	V	-
Gate-to-Source Voltage	VGS	-	-	±20	V	-
Continuous Drain Current	ID	-	5	10	A	TC = 25°C
Pulse Drain Current	ID(p)	-	15	30	A	tp = 10 ms, f ≤ 1 Hz
Power Dissipation	PT	-	-	180	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C	-
Storage Temperature	TSTG	-55	-	150	°C	-
Thermal Resistance	RθJC	-	0.7	-	°C/W	Case to Junction

Instructions for Use:

1. Mounting and Handling:

   • Ensure that the device is mounted on a heatsink to dissipate heat effectively.
   • Handle the device with care to avoid mechanical stress or damage to the leads.

2. Electrical Connections:

   • Connect the drain (D) and source (S) terminals correctly to avoid reverse polarity.
   • Apply gate (G) voltage carefully to prevent overvoltage, which can damage the gate oxide.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175°C.
   • Use thermal paste between the device and heatsink to improve thermal conductivity.

4. Pulse Operation:

   • For pulse operation, ensure that the pulse duration (t_p) and frequency (f) are within the specified limits to avoid overheating.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Avoid exposing the device to extreme temperatures outside the storage range (-55°C to 150°C).

6. Safety Precautions:

   • Always use appropriate safety measures when handling high voltages and currents.
   • Follow all relevant electrical and mechanical standards and regulations.

7. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Use a suitable test setup to avoid damaging the device during testing.

(For reference only)