2SC3052-T192-1F

2SC3052-T192-1F


Specifications
Details

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Parameter Value Unit
Part Number 2SC3052-T192-1F -
Type NPN Silicon Transistor -
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
Power Dissipation (PD) 45 W
Transition Frequency (FT) 450 MHz
Storage Temperature Range (TSTG) -55 to 150 掳C
Operating Temperature Range (TA) -55 to 150 掳C
Package Type TO-3P -

Instructions:

  1. Handling Precautions: Avoid exposing the component to temperatures outside the specified storage and operating ranges.
  2. Mounting: Ensure proper heat sinking when mounting, especially if operating near maximum power dissipation levels.
  3. Electrical Connections: Connect the collector, base, and emitter according to circuit design specifications. Ensure correct polarity to prevent damage.
  4. Storage: Store in a dry environment within the temperature range specified to avoid degradation.
  5. Soldering: Use appropriate soldering techniques to avoid thermal shock. Follow manufacturer guidelines for soldering temperature and duration.
  6. Testing: Before incorporating into final designs, test the component under conditions similar to those expected in operation to ensure reliability.
(For reference only)

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