Details

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BUY RFP4N100 https://www.utsource.net/itm/p/12610498.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	100	V
Gate-Source Voltage	VGS	-10	-	10	V
Continuous Drain Current	ID	-	2.7	-	A	@ VGS = 10V, TC = 25掳C
Pulse Drain Current	IDpeak	-	8.1	-	A	@ VGS = 10V, tp = 10ms, TC = 25掳C
Power Dissipation	PD	-	-	64	W	@ TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The RFP4N100 is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection.
   • Avoid exposing the device to temperatures outside the specified storage temperature range.

2. Mounting and Soldering:

   • Ensure that the PCB layout provides adequate heat dissipation to keep the junction temperature within the specified limits.
   • Use recommended soldering profiles to avoid thermal shock and damage to the device.

3. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified range to ensure reliable operation.
   • Do not exceed the maximum drain-source voltage (V_DS) or continuous drain current (I_D).
   • For pulse applications, ensure that the pulse duration and peak current do not exceed the specified limits.

4. Testing and Troubleshooting:

   • Use appropriate test equipment and methods to verify the performance of the device.
   • If the device fails to operate as expected, check for correct biasing, proper heat sinking, and any potential damage from ESD or overvoltage.

5. Storage and Packaging:

   • Store the device in a dry, cool environment to prevent moisture absorption and degradation.
   • Follow recommended packaging guidelines to protect the device during transportation and handling.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)