Details

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BUY MJL3281A https://www.utsource.net/itm/p/12610507.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE(O)	-	60	-	V
Emitter-Collector Voltage	VEC(O)	-	60	-	V
Base-Emitter Voltage	VBE(O)	-	7	-	V
Collector Current	IC	-	15	-	A
Continuous Power Dissipation (TA = 25掳C)	PTOT	-	115	-	W
Storage Temperature	TSTG	-55	-	150	掳C
Junction Temperature	TJ	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure the transistor is mounted on a suitable heat sink to maintain junction temperature within specified limits.
   • Use thermal compound between the transistor and the heat sink for efficient heat transfer.

2. Biasing:

   • Apply base current (I_B) to control the collector current (I_C). The typical h_FE (current gain) should be considered for biasing calculations.
   • Avoid exceeding the maximum base-emitter voltage (V_BE(O)) to prevent damage.

3. Operation:

   • Do not exceed the maximum collector-emitter voltage (V_CE(O)) or emitter-collector voltage (V_EC(O)).
   • Ensure the continuous power dissipation (P_TOT) does not exceed the rated value at the operating ambient temperature (T_A).

4. Storage:

   • Store the transistor in a dry environment within the specified storage temperature range (-55掳C to 150掳C).

5. Handling:

   • Handle with care to avoid mechanical stress and static discharge, which can damage the device.
   • Use appropriate anti-static measures when handling the transistor.

6. Testing:

   • Use a multimeter or transistor tester to verify the functionality of the transistor before installation.
   • Check for short circuits and open circuits between the leads.

7. Safety:

   • Always follow safety guidelines when working with high voltages and currents.
   • Use protective equipment such as gloves and safety glasses when handling the transistor and associated components.

(For reference only)