K855

K855


Specifications
Details

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Parameter Description
Part Number K855
Type Silicon Controlled Rectifier (SCR)
Voltage Rating 800V (repetitive peak off-state voltage)
Current Rating 5A (non-repetitive peak on-state current)
Gate Trigger Current 10mA (maximum)
Holding Current 5mA (minimum)
Dissipation Power 100W (maximum at Tc = 40掳C)
Junction Temperature -40掳C to +125掳C

Instructions for Use:

  1. Mounting: Ensure the device is securely mounted on a suitable heatsink to manage heat dissipation, especially when operating near maximum power levels.
  2. Connection: Connect the anode to the higher potential and the cathode to the lower potential in your circuit. The gate should be connected to the control signal source.
  3. Triggering: Apply a pulse of at least 10mA to the gate to trigger the SCR into conduction. Ensure the pulse duration is sufficient to exceed the latching time.
  4. Safety: Operate within specified voltage and current limits to avoid damage. Use protective circuits if necessary to prevent overvoltage or overcurrent conditions.
  5. Storage: Store in a dry environment away from high temperatures and direct sunlight to prevent degradation of performance.
(For reference only)

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