Details

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BUY IRFB5615 https://www.utsource.net/itm/p/12610521.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Continuous Drain Current	ID	-	32	-	A	TC = 25掳C
Pulse Drain Current	ID(P)	-	94	-	A	TC = 25掳C, t = 10 渭s
Gate-Source Voltage	VGS	-10	-	10	V	-
Drain-Source Breakdown Voltage	VDS	55	-	60	V	-
Gate-Threshold Voltage	VGS(th)	2.0	3.0	4.0	V	ID = 250 渭A, TC = 25掳C
On-State Resistance	RDS(on)	4.0	-	5.0	m惟	VGS = 10V, ID = 20A, TC = 25掳C
Total Power Dissipation	PD	-	-	120	W	TC = 25掳C
Junction Temperature	TJ	-55	-	150	掳C	-
Storage Temperature Range	Tstg	-55	-	150	掳C	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid mechanical stress.
   • Ensure proper heat sinking for high power applications.

2. Electrical Connections:

   • Connect the drain (D) to the high voltage side of the circuit.
   • Connect the source (S) to the low voltage side or ground.
   • Apply the gate (G) voltage relative to the source (S).

3. Gate Drive:

   • Ensure the gate voltage (VGS) is within the specified range to avoid damage.
   • For optimal performance, use a gate driver with low output impedance.

4. Thermal Management:

   • Use a heatsink if the device will operate at high power levels.
   • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.

5. Pulse Operation:

   • For pulse applications, ensure the pulse duration and frequency do not exceed the maximum ratings.
   • Consider the thermal effects of repeated pulses.

6. Storage and Transportation:

   • Store the device in a dry, cool place away from direct sunlight.
   • Follow ESD (Electrostatic Discharge) precautions during handling and installation.

7. Safety Precautions:

   • Do not exceed the maximum ratings to prevent damage or failure.
   • Use appropriate protective equipment when working with high voltages.

(For reference only)