BB207,215

BB207,215


Specifications
Details

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Parameter BB207 BB215
Type Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT)
Polarity NPN PNP
Collector-Emitter Voltage (Vce) 80V 80V
Collector Base Voltage (Vcb) 80V 80V
Emitter Base Voltage (Veb) 5V 5V
Continuous Collector Current (Ic) 1.5A 1.5A
Power Dissipation (Ptot) 625mW at Tc=25掳C 625mW at Tc=25掳C
Transition Frequency (ft) 300MHz 300MHz
Storage Temperature Range (Tstg) -65掳C to 150掳C -65掳C to 150掳C
Package SOT-23 SOT-23

Instructions:

  • Handling: Use appropriate anti-static precautions when handling these components.
  • Soldering: Ensure the soldering temperature does not exceed the maximum junction temperature specified in the datasheet.
  • Mounting: For optimal performance, ensure proper heat dissipation if operating near maximum power ratings.
  • Testing: When testing the devices, do not exceed the maximum ratings listed above to avoid damage.
  • Application: Suitable for general-purpose switching and amplification applications.
(For reference only)

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