Details

---

BUY G4PC30KD https://www.utsource.net/itm/p/12610614.html

Parameter	Description	Value
Part Number	Component Identifier	G4PC30KD
Type	Device Type	Power MOSFET
Package	Housing Type	TO-220
VDS	Drain-to-Source Voltage	30V
RDS(on)	On-State Resistance	5.6 m惟 (Typical)
ID	Continuous Drain Current	80A (Max)
Ptot	Total Power Dissipation	150W
Junction Temp	Maximum Operating Temperature	-55掳C to +175掳C
Gate Charge	Gate Charge	115 nC (Max)
Input Capacitance	Capacitance between Gate and Source	2920 pF (Typical)
Output Capacitance	Capacitance between Drain and Source	2670 pF (Typical)
Reverse Transfer	Capacitance between Drain and Gate	63 pF (Typical)

Instructions:

1. Installation: Ensure the device is mounted on a heatsink if operating near maximum power dissipation limits.
2. Handling: Handle with care to avoid damage to the leads and package. Use appropriate ESD protection.
3. Soldering: Solder within recommended temperature and time limits to prevent thermal damage.
4. Operation: Operate within specified voltage and current ratings to ensure reliable performance.
5. Storage: Store in a dry, cool place away from direct sunlight and corrosive environments.

(For reference only)