Details

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BUY 3DD13012AN https://www.utsource.net/itm/p/12610632.html

Parameter	Value	Unit
Collector-Emitter Voltage (Vce)	1200	V
Collector Current (Ic)	1300	mA
Power Dissipation (Ptot)	65	W
Junction Temperature (Tj)	-55 to +150	掳C
Storage Temperature (Tstg)	-55 to +150	掳C
Transition Frequency (ft)	2.5	MHz
Base-Emitter Saturation Voltage (Vbe(sat))	2.0 typical	V
Collector-Emitter Saturation Voltage (Vce(sat))	2.0 typical	V

Instructions for Use:

1. Installation:

   • Ensure the device is handled with care to avoid damage to leads and the body.
   • Mount the transistor on a suitable heatsink if operating at high power levels.

2. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended junction temperature range to ensure reliability.

3. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Keep in original packaging until ready to use to prevent static damage.

4. Handling Precautions:

   • Use appropriate anti-static precautions when handling.
   • Avoid mechanical stress on the leads during soldering or assembly.

5. Soldering:

   • Solder quickly to avoid overheating the junction.
   • Follow manufacturer guidelines for soldering temperatures and times.

(For reference only)