Details
BUY BTS130 https://www.utsource.net/itm/p/12610635.html
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | Ta = 25掳C | - | 5 | - | A |
| Pulse Drain Current | IDp | t = 10 ms, duty cycle 1%, Ta = 25掳C | - | 12 | - | A |
| Drain-Source On-State Resistance | RDS(on) | ID = 5A, VGS = 10V, Ta = 25掳C | - | 0.018 | - | 惟 |
| Gate-Source Voltage | VGS(th) | ID = 1mA | 1.2 | 2.5 | 4.0 | V |
| Maximum Drain-Source Voltage | VDS | - | - | 30 | - | V |
| Maximum Gate-Source Voltage | VGS | - | - | 卤20 | - | V |
| Junction Temperature | Tj | - | - | 150 | - | 掳C |
| Storage Temperature Range | Tstg | - | -65 | - | 150 | 掳C |
Instructions for Use:
Power Supply:
- Ensure the supply voltage does not exceed the maximum drain-source voltage (VDS) of 30V.
- The gate-source voltage (VGS) should not exceed 卤20V to avoid damage to the device.
Current Handling:
- The continuous drain current (ID) should not exceed 5A at 25掳C ambient temperature.
- For pulse applications, the peak current (IDp) can be up to 12A for a 10ms pulse with a 1% duty cycle at 25掳C ambient temperature.
Thermal Management:
- The junction temperature (Tj) should not exceed 150掳C.
- Proper heat sinking is recommended to manage the temperature, especially under high current or high ambient temperature conditions.
Gate Drive:
- Apply a gate-source voltage (VGS) of at least 10V to ensure the device is fully turned on and operates with the minimum on-state resistance (RDS(on)).
- The threshold voltage (VGS(th)) ranges from 1.2V to 4.0V, so ensure the gate drive circuit provides sufficient voltage to turn the device on reliably.
Storage:
- Store the device within the storage temperature range of -65掳C to 150掳C to prevent damage.
Handling Precautions:
- Handle the device with care to avoid static discharge, which can damage the sensitive components.
- Follow proper soldering techniques to avoid thermal shock and ensure good electrical connections.
Testing:
- Before integrating the BTS130 into a circuit, test it with known parameters to verify its functionality and performance.
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