Details

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BUY 22NM60N https://www.utsource.net/itm/p/12610643.html

Parameter	Value	Unit
Device Type	N-Channel MOSFET	-
Maximum Drain-Source Voltage (VDS)	60	V
Maximum Gate-Source Voltage (VGS)	卤20	V
Continuous Drain Current (ID)	22	A
Pulse Drain Current (IDM)	100	A
Total Power Dissipation (PD)	180	W
Junction Temperature (TJ)	-55 to 175	掳C
Storage Temperature (TSTG)	-65 to 150	掳C
Thermal Resistance (R胃JC)	1.3	掳C/W
Input Capacitance (Ciss)	1900	pF
Output Capacitance (Coss)	350	pF
Reverse Transfer Capacitance (Crss)	320	pF
Gate Charge (Qg)	110	nC
Drain-Source On-State Resistance (RDS(on))	4.5	m惟

Instructions for Use:

1. Handling Precautions:

   • Handle the 22NM60N with care to avoid damage to the pins.
   • Use ESD (Electrostatic Discharge) protection to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.
   • Follow recommended PCB layout guidelines to ensure optimal performance and reliability.

3. Biasing:

   • Apply gate-source voltage (VGS) within the specified range to avoid damaging the device.
   • Ensure that the drain-source voltage (VDS) does not exceed the maximum rating.

4. Operation:

   • Operate the device within the specified temperature range to avoid thermal runaway.
   • Monitor the drain current (ID) to ensure it does not exceed the continuous or pulse ratings.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against environmental factors.

6. Testing:

   • Use appropriate test equipment and procedures to verify the device parameters before installation.
   • Refer to the datasheet for detailed testing procedures and recommended test conditions.

(For reference only)