Details

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BUY BD 249C https://www.utsource.net/itm/p/12610670.html

Parameter	Value	Unit
Type	NPN Silicon Transistor	-
Collector-Emitter Voltage (VCEO)	80	V
Collector-Base Voltage (VCBO)	80	V
Emitter-Base Voltage (VEBO)	5	V
Collector Current (IC)	1.5	A
Power Dissipation (Ptot)	62.5	W
Transition Frequency (fT)	300	MHz
Storage Temperature Range (Tstg)	-55 to +150	掳C
Operating Temperature Range (Tamb)	-55 to +150	掳C

Instructions for BD 249C:

1. Handling and Storage:

   • Store in a dry place within the temperature range of -55掳C to +150掳C.
   • Handle with care to avoid mechanical damage.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Use appropriate mounting hardware to secure the transistor without excessive force on the leads.

3. Electrical Connections:

   • Verify correct polarity before connecting to the circuit.
   • Avoid exceeding the maximum ratings for collector-emitter voltage, collector current, and power dissipation.

4. Operation:

   • Operate within specified temperature ranges to ensure reliable performance.
   • Keep junction temperature within safe limits to prevent thermal runaway.

5. Testing:

   • Test under controlled conditions using suitable test equipment.
   • Do not exceed the absolute maximum ratings during testing.

6. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Ideal for circuits requiring high current handling capability up to 1.5A.

(For reference only)