Details

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BUY ZRB500F01TA https://www.utsource.net/itm/p/12610671.html

Parameter	Description
Part Number	ZRB500F01TA
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Configuration	N-Channel
VDS (Max Drain-Source Voltage)	500 V
RDS(on) (On-Resistance)	1.0 惟 at 25掳C, VGS = 10V
ID (Continuous Drain Current)	0.4 A at 25掳C, VGS = 10V
Power Dissipation (PD)	0.36 W at TJ = 25掳C
Gate Charge (Qg)	10 nC at VGS = 10V
Total Gate Charge (Qgtot)	12 nC at VGS = 10V
Input Capacitance (Ciss)	180 pF at VDS = 300V, VGS = 0V
Output Capacitance (Coss)	70 pF at VDS = 300V, VGS = 0V
Reverse Transfer Capacitance (Crss)	40 pF at VDS = 300V, VGS = 0V
Operating Temperature Range (TJ)	-55掳C to +150掳C
Storage Temperature Range (Tstg)	-65掳C to +150掳C
Package Type	TO-92

Instructions for Use:

1. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper heat sinking if operating near the maximum power dissipation limits.
3. Biasing: Apply gate voltage carefully to avoid exceeding the maximum ratings. The typical operating gate-source voltage (VGS) should be within the specified range to prevent damage.
4. Thermal Management: Monitor the junction temperature (TJ) to ensure it stays within the operational limits. Proper ventilation or cooling may be necessary for high current applications.
5. Testing: When testing the device, adhere to the absolute maximum ratings provided in the datasheet to avoid potential damage or failure.
6. Applications: Suitable for switching applications such as power supplies, motor control, and other circuits requiring a robust N-channel MOSFET with high voltage capability.

(For reference only)