Details

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BUY 2SB1142S https://www.utsource.net/itm/p/12610672.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 50 mA, TA = 25掳C
Emitter-Collector Voltage	VECC	-	-	60	V	IC = 50 mA, TA = 25掳C
Base-Emitter Voltage	VBE	-	-	7	V	IC = 50 mA, TA = 25掳C
Collector Current	IC	-	-	50	mA	VCE = 30 V, TA = 25掳C
Base Current	IB	-	-	5	mA	VCE = 30 V, TA = 25掳C
DC Current Gain	hFE	100	300	700	-	IC = 10 mA, VCE = 10 V, TA = 25掳C
Transition Frequency	fT	-	300	500	MHz	IC = 10 mA, VCE = 10 V, TA = 25掳C
Storage Temperature Range	TSTG	-55	-	150	掳C	-
Operating Temperature Range	TA	-55	-	150	掳C	-

Instructions:

1. Handling Precautions:

   • Avoid exposing the 2SB1142S to temperatures outside its operating range.
   • Use proper static protection when handling the device to prevent damage.

2. Mounting and Soldering:

   • Ensure that the soldering temperature does not exceed 300掳C for more than 10 seconds.
   • Allow adequate cooling time after soldering to prevent thermal shock.

3. Circuit Design:

   • Ensure that the collector-emitter voltage (V_CEO) and emitter-collector voltage (V_ECC) do not exceed 60V.
   • Limit the collector current (I_C) to 50 mA to avoid exceeding the maximum ratings.
   • Use appropriate base resistors to control the base current (I_B) and ensure stable operation.

4. Testing:

   • Test the device under specified conditions to verify performance parameters.
   • Measure the DC current gain (h_FE) at I_C = 10 mA and V_CE = 10 V to ensure it falls within the typical range of 100 to 700.

5. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static discharge and physical damage.

(For reference only)