Details

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BUY 2SC2547 https://www.utsource.net/itm/p/12610689.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0.5 mA	-	-	30	V
Collector-Base Voltage	V(BR)CBO	IB = 0	-	-	40	V
Emitter-Base Voltage	V(BR)EBO	IE = 0	-	-	6	V
Collector Current	IC	VCE = 25 V	-	100	-	mA
Base Current	IB	VCE = 25 V, IC = 100 mA	-	5	-	mA
DC Current Gain	hFE	IC = 10 mA, VCE = 5 V	100	300	700	-
Transition Frequency	fT	IC = 1 mA	-	200	-	MHz
Power Dissipation	PD	Tc = 25掳C	-	-	625	mW
Operating Junction Temperature	TJ	-	-55	-	150	掳C

Instructions for Use:

1. Mounting and Handling: Handle the transistor carefully to avoid damage. Ensure proper heat sinking if operating near maximum power dissipation.
2. Biasing: Ensure that the base current (IB) is sufficient to keep the transistor in the desired operating region (saturation or active).
3. Power Supply Considerations: Verify that the supply voltage does not exceed the maximum collector-emitter voltage (V(BR)CEO) to prevent breakdown.
4. Thermal Management: Monitor the junction temperature (TJ) to ensure it remains within operational limits. Proper ventilation or heatsinking may be required.
5. Storage and Operation: Store in a dry environment and operate within specified temperature ranges to maintain reliability.
6. Testing: When testing, apply voltages and currents gradually to avoid exceeding any of the absolute maximum ratings listed.

(For reference only)