Details
BUY SI9717CY-T1-E3 https://www.utsource.net/itm/p/12610723.html
| Parameter | Value/Description |
|---|---|
| Part Number | SI9717CY-T1-E3 |
| Type | MOSFET |
| Configuration | N-Channel |
| Package Type | TO-252 (DPAK) |
| Vds (Max Drain-Source Voltage) | 60V |
| Id (Continuous Drain Current) | 4.8A at 25掳C, 2.4A at 70掳C |
| Rds(on) (Typical On-Resistance) | 0.045惟 at Vgs=10V, 0.06惟 at Vgs=4.5V |
| Vgs(th) (Gate Threshold Voltage) | 1.5V to 3.5V |
| Qg (Total Gate Charge) | 22nC |
| Operating Temperature Range | -55掳C to +150掳C |
| Storage Temperature Range | -55掳C to +150掳C |
| Mounting Type | Surface Mount |
Instructions:
- Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures when handling.
- Soldering: Ensure the soldering temperature does not exceed 260掳C for more than 10 seconds to prevent damage to the component.
- Installation: Verify that the PCB layout matches the footprint of the TO-252 package to ensure correct installation.
- Power Dissipation: To avoid overheating, ensure adequate heat dissipation if operating near maximum current or voltage ratings.
- Testing: When testing the device, do not exceed the maximum ratings specified in the parameter table to prevent damage.
- Storage: Store in a dry, cool environment within the specified storage temperature range to maintain reliability and performance.
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