Details

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BUY GT30J126 30J126 https://www.utsource.net/itm/p/12610745.html

Parameter	Description	Value
Part Number	Device Identifier	GT30J126 30J126
Type	Device Type	MOSFET
Configuration	Channel Configuration	N-Channel
Vds (V)	Drain to Source Voltage	30V
Id (A)	Continuous Drain Current	126A
Rds(on) (m惟)	On-State Resistance at 25掳C	1.8m惟
Vgs(th) (V)	Gate Threshold Voltage	2.5V to 4.5V
Power Dissipation	Maximum Power Dissipation	350W
Package	Encapsulation Type	TO-247
Operating Temp	Junction Temperature Range	-55掳C to 175掳C

Instructions:

1. Handling: Use appropriate ESD protection when handling the device to prevent damage.
2. Mounting: Ensure proper heat sinking for devices operating near their maximum power dissipation limits.
3. Soldering: Follow manufacturer guidelines for soldering temperature and duration to avoid damaging the component.
4. Testing: Test the device within specified voltage and current limits to ensure reliable operation.
5. Storage: Store in a dry environment away from direct sunlight and sources of heat.

(For reference only)