Details

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BUY NDFP03N150CG https://www.utsource.net/itm/p/12610775.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	1500	-	V	-
Gate-Source Voltage	VGS	-20	0	20	V	-
Continuous Drain Current	ID	-	3	-	A	TC = 25掳C
Continuous Drain Current	ID	-	1.4	-	A	TC = 100掳C
Pulse Drain Current	IDpeak	-	9	-	A	tp = 10 ms, TC = 25掳C
RDS(on) at VGS = 10V	RDS(on)	-	0.85	-	惟	TC = 25掳C
RDS(on) at VGS = 10V	RDS(on)	-	1.4	-	惟	TC = 100掳C
Gate Charge	QG	-	60	-	nC	-
Input Capacitance	Ciss	-	1200	-	pF	VDS = 500V, VGS = 0V
Output Capacitance	Coss	-	180	-	pF	VDS = 500V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	320	-	pF	VDS = 500V, VGS = 0V
Total Power Dissipation	PTOT	-	175	-	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads and the die.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the device is mounted on a heatsink if continuous high power dissipation is expected.
   • Use thermal paste or a thermal pad to enhance heat transfer between the device and the heatsink.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to avoid damaging the device.
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating.

4. Current Limiting:

   • Do not exceed the maximum continuous drain current (I_D) ratings, especially at higher temperatures.
   • For pulse applications, ensure that the pulse duration and frequency do not exceed the specified limits.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it stays within safe operating limits.
   • Use appropriate cooling methods (e.g., forced air, liquid cooling) if necessary.

6. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Follow recommended storage temperature ranges to avoid degradation.

7. Testing:

   • Perform initial testing at low power levels to verify correct operation before applying full load conditions.
   • Use appropriate test equipment and procedures to avoid damage to the device during testing.

(For reference only)