Details

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BUY 2SC5198. https://www.utsource.net/itm/p/12610777.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	80	V	IC = 0.5A, Tc = 25掳C
Emitter-Base Voltage	VEBO	-5	-	-	V	IE = 1.0mA
Collector-Base Voltage	VCBO	-	-	90	V	IC = 0.5A, Tc = 25掳C
Collector Current	IC	-	0.5	1.0	A	VCE = 30V
Continuous Total Dissipation	PD	-	-	625	mW	Ta = 25掳C
Junction Temperature	TJ	-55	-	150	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Transition Frequency	FT	-	300	-	MHz	IC = 10mA, VCE = 10V

Instructions for Use:

1. Mounting: Ensure the device is mounted on a suitable heat sink if operating near maximum power dissipation to maintain junction temperature within safe limits.
2. Biasing: For optimal performance, bias the base-emitter junction correctly. The emitter-base voltage should not exceed the specified limit to prevent damage.
3. Operating Voltage and Current: Do not exceed the maximum collector-emitter voltage or collector current ratings. Exceeding these can lead to device failure.
4. Temperature Considerations: Monitor the junction temperature especially in high-power applications. Ensure the ambient temperature does not exceed the storage temperature range.
5. Handling Precautions: Handle the device with care to avoid static damage. Use appropriate ESD protection measures.
6. Storage: Store the device in a controlled environment within the specified storage temperature range to ensure longevity and reliability.

(For reference only)