Details

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BUY MIP2E2D https://www.utsource.net/itm/p/12610786.html

Parameter	Description
Part Number	MIP2E2D
Type	Dual N-Channel Enhancement Mode MOSFET
Vgs(th)	Gate Threshold Voltage: 卤2.0V to 卤4.0V
Vds	Drain-to-Source Voltage: 卤20V
Ids	Continuous Drain Current: 卤2A (at Vgs = 10V, Ta = 25掳C)
Rds(on)	On-Resistance: 0.6惟 (max) at Vgs = 10V, Id = 1A
Pd	Total Power Dissipation: 470mW (at Ta = 25掳C)
Operating Temp	Junction Temperature Range: -55掳C to +150掳C
Package	SOT-23

Instructions for Use:

1. Handling Precautions: The MIP2E2D is sensitive to ESD (Electrostatic Discharge). Handle with care and use appropriate anti-static measures.
2. Biasing Conditions: Ensure that the gate voltage (Vgs) does not exceed the specified threshold to avoid damage to the device.
3. Thermal Management: Given its power dissipation limit, ensure adequate heat sinking or cooling if operating near maximum current or in high ambient temperatures.
4. Mounting: When mounting on a PCB, follow standard practices for SOT-23 packages to ensure good thermal and electrical connections.
5. Storage: Store in a dry environment and observe polarity when installing to prevent damage.

(For reference only)