Details

---

BUY 2SC2579. https://www.utsource.net/itm/p/12610813.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCE	100	V
Collector-Base Voltage	VCB	100	V
Emitter-Base Voltage	VEB	6.0	V
Collector Current	IC	1.5	A
Base Current	IB	150	mA
Power Dissipation	PT	65	W
Operating Temperature Range	TA	-55 to 150	掳C
Storage Temperature Range	TSTG	-65 to 150	掳C

Instructions for Use:

1. Handling:

   • Handle the 2SC2579 with care to avoid mechanical damage.
   • Use proper ESD (Electrostatic Discharge) precautions to prevent damage from static electricity.

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation, especially when operating near the maximum power rating.
   • Use thermal compound between the transistor and the heat sink to improve thermal conductivity.

3. Biasing:

   • Ensure that the base current is within the specified limits to avoid overheating and potential damage.
   • Use appropriate biasing circuits to maintain stable operation over temperature variations.

4. Operation:

   • Do not exceed the maximum ratings for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and power dissipation.
   • Operate the device within the specified temperature range to ensure reliable performance.

5. Testing:

   • When testing the 2SC2579, use a suitable test setup that can handle the maximum ratings without causing damage.
   • Verify all connections and circuit parameters before applying power.

6. Storage:

   • Store the 2SC2579 in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

(For reference only)